BSD816SNL6327 vs BSD816SNH6327

Product Attributes

Part Number BSD816SNL6327 BSD816SNH6327
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSD816SNL6327 BSD816SNH6327
Product Status Active Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 20 V
Current - Continuous Drain (Id) @ 25°C - 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - 160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id - 950mV @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs - 0.6 nC @ 2.5 V
Vgs (Max) - ±8V
Input Capacitance (Ciss) (Max) @ Vds - 180 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 500mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - PG-SOT363-6
Package / Case - 6-VSSOP, SC-88, SOT-363