BSC883N03MSGATMA1 vs BSC889N03MSGATMA1

Product Attributes

Part Number BSC883N03MSGATMA1 BSC889N03MSGATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC883N03MSGATMA1 BSC889N03MSGATMA1
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 34 V 30 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 98A (Tc) 12A (Ta) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 30A, 10V 9.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 15 V 1500 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 57W (Tc) 2.5W (Ta), 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN