| Part Number | BSC900N20NS3GATMA1 | BSC500N20NS3GATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
|
|
|
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 15.2A (Tc) | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 7.6A, 10V | 50mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 30µA | 4V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 10 V | 15 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 100 V | 1580 pF @ 100 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 62.5W (Tc) | 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TDSON-8-5 | PG-TDSON-8-1 |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN |