BSC160N15NS5ATMA1 vs BSC110N15NS5ATMA1

Product Attributes

Part Number BSC160N15NS5ATMA1 BSC110N15NS5ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC160N15NS5ATMA1 BSC110N15NS5ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc) 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 8V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 28A, 10V 11mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4.6V @ 60µA 4.6V @ 91µA
Gate Charge (Qg) (Max) @ Vgs 23.1 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1820 pF @ 75 V 2770 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 96W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN