BSC0924NDIATMA1 vs BSC0923NDIATMA1

Product Attributes

Part Number BSC0924NDIATMA1 BSC0923NDIATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Arrays Transistors - FETs, MOSFETs - Arrays
BSC0924NDIATMA1 BSC0923NDIATMA1
Product Status Active Active
FET Type 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 17A, 32A 17A, 32A
Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 15V 1160pF @ 15V
Power - Max 1W 1W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN
Supplier Device Package PG-TISON-8 PG-TISON-8