BSC084P03NS3GATMA1 vs BSC084P03NS3EGATMA1

Product Attributes

Part Number BSC084P03NS3GATMA1 BSC084P03NS3EGATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC084P03NS3GATMA1 BSC084P03NS3EGATMA1
Product Status Active Not For New Designs
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 14.9A (Ta), 78.6A (Tc) 14.9A (Ta), 78.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 50A, 10V 8.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.1V @ 105µA 3V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 57.7 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 4785 pF @ 15 V 4240 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc) 2.5W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-5 PG-TDSON-8-5
Package / Case 8-PowerTDFN 8-PowerTDFN