BSC0803LSATMA1 vs BSC0703LSATMA1

Product Attributes

Part Number BSC0803LSATMA1 BSC0703LSATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC0803LSATMA1 BSC0703LSATMA1
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 60 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 44A (Tc) 15A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14.6mOhm @ 22A, 10V 6.5mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.3V @ 23µA 2.3V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 13 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 50 V 1800 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 52W (Tc) 2.5W (Ta), 46W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-6 PG-TDSON-8-6
Package / Case 8-PowerTDFN 8-PowerTDFN