BSC0702LSATMA1 vs BSC0802LSATMA1

Product Attributes

Part Number BSC0702LSATMA1 BSC0802LSATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC0702LSATMA1 BSC0802LSATMA1
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V 3.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 49µA 2.3V @ 115µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V 46 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 30 V 6500 pF @ 50 V
FET Feature Standard -
Power Dissipation (Max) 83W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN