BSC059N04LSGATMA1 vs BSC059N04LS6ATMA1

Product Attributes

Part Number BSC059N04LSGATMA1 BSC059N04LS6ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC059N04LSGATMA1 BSC059N04LS6ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 73A (Tc) 17A (Ta), 49A (Tc), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 50A, 10V 5.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 23µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 9.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 20 V 830 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 3W (Ta), 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-5 PG-TDSON-8-6
Package / Case 8-PowerTDFN 8-PowerTDFN