BSC052N03S G vs BSC059N03S G

Product Attributes

Part Number BSC052N03S G BSC059N03S G
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC052N03S G BSC059N03S G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 80A (Tc) 17.5A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 50A, 10V 5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 40µA 2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 21 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2820 pF @ 15 V 2670 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 54W (Tc) 17.5W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-6 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN