BSC057N08NS3GATMA1 vs BSC047N08NS3GATMA1

Product Attributes

Part Number BSC057N08NS3GATMA1 BSC047N08NS3GATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC057N08NS3GATMA1 BSC047N08NS3GATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 100A (Tc) 18A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 50A, 10V 4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 73µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 69 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 40 V 4800 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 114W (Tc) 2.5W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-5 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN