BSC040N10NS5ATMA1 vs BSC050N10NS5ATMA1

Product Attributes

Part Number BSC040N10NS5ATMA1 BSC050N10NS5ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC040N10NS5ATMA1 BSC050N10NS5ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 16A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V 5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 95µA 3.8V @ 72µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 50 V 4300 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 139W (Tc) 3W (Ta), 136W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN