BSC021N08NS5ATMA1 vs BSC026N08NS5ATMA1

Product Attributes

Part Number BSC021N08NS5ATMA1 BSC026N08NS5ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC021N08NS5ATMA1 BSC026N08NS5ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V 2.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 146µA 3.8V @ 115µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 92 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8600 pF @ 40 V 6800 pF @ 40 V
FET Feature Standard -
Power Dissipation (Max) 214W (Tc) 2.5W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSON-8-3 PG-TDSON-8-6
Package / Case 8-PowerTDFN 8-PowerTDFN