Part Number | BSC021N08NS5ATMA1 | BSC026N08NS5ATMA1 |
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Manufacturer | Infineon Technologies | Infineon Technologies |
Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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Product Status | Active | Active |
FET Type | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V | 80 V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 23A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V |
Rds On (Max) @ Id, Vgs | 2.1mOhm @ 50A, 10V | 2.6mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 146µA | 3.8V @ 115µA |
Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | 92 nC @ 10 V |
Vgs (Max) | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 8600 pF @ 40 V | 6800 pF @ 40 V |
FET Feature | Standard | - |
Power Dissipation (Max) | 214W (Tc) | 2.5W (Ta), 156W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Supplier Device Package | PG-TSON-8-3 | PG-TDSON-8-6 |
Package / Case | 8-PowerTDFN | 8-PowerTDFN |