BSC046N02KSGAUMA1 vs BSC026N02KSGAUMA1

Product Attributes

Part Number BSC046N02KSGAUMA1 BSC026N02KSGAUMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC046N02KSGAUMA1 BSC026N02KSGAUMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 80A (Tc) 25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 50A, 4.5V 2.6mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 110µA 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 27.6 nC @ 4.5 V 52.7 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 10 V 7800 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 48W (Tc) 2.8W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN