Part Number | BSC024N025S G | BSC029N025S G |
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Manufacturer | Infineon Technologies | Infineon Technologies |
Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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Product Status | Obsolete | Obsolete |
FET Type | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25 V | 25 V |
Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 100A (Tc) | 24A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 50A, 10V | 2.9mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 2V @ 90µA | 2V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 5 V | 41 nC @ 5 V |
Vgs (Max) | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6530 pF @ 15 V | 5090 pF @ 15 V |
FET Feature | - | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | 2.8W (Ta), 78W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Supplier Device Package | PG-TDSON-8-1 | PG-TDSON-8-1 |
Package / Case | 8-PowerTDFN | 8-PowerTDFN |