BSC024N025S G vs BSC029N025S G

Product Attributes

Part Number BSC024N025S G BSC029N025S G
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC024N025S G BSC029N025S G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 100A (Tc) 24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 50A, 10V 2.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 90µA 2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 5 V 41 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6530 pF @ 15 V 5090 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN