BSC020N03LSGATMA1 vs BSC020N03LSGATMA2

Product Attributes

Part Number BSC020N03LSGATMA1 BSC020N03LSGATMA2
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC020N03LSGATMA1 BSC020N03LSGATMA2
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 2mOhm @ 30A, 10V -
Vgs(th) (Max) @ Id 2.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 15 V -
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 96W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-TDSON-8-1 -
Package / Case 8-PowerTDFN -