BSC014N06NSATMA1 vs BSC012N06NSATMA1

Product Attributes

Part Number BSC014N06NSATMA1 BSC012N06NSATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC014N06NSATMA1 BSC012N06NSATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) 36A (Ta), 306A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.45mOhm @ 50A, 10V 1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 120µA 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V 143 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 30 V 11000 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 156W (Tc) 214W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-17 PG-TSON-8-3
Package / Case 8-PowerTDFN 8-PowerTDFN