BSC010N04LSIATMA1 vs BSC010N04LSCATMA1

Product Attributes

Part Number BSC010N04LSIATMA1 BSC010N04LSCATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC010N04LSIATMA1 BSC010N04LSCATMA1
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 40 V -
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 100A (Tc) 282A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 1.05mOhm @ 50A, 10V -
Vgs(th) (Max) @ Id 2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 20 V -
FET Feature Schottky Diode (Body) -
Power Dissipation (Max) 2.5W (Ta), 139W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-TDSON-8 FL -
Package / Case 8-PowerTDFN -