BSC010N04LS6ATMA1 vs BSC010N04LSIATMA1

Product Attributes

Part Number BSC010N04LS6ATMA1 BSC010N04LSIATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC010N04LS6ATMA1 BSC010N04LSIATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta), 100A (Tc) 37A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 50A, 10V 1.05mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 4.5 V 87 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 20 V 6200 pF @ 20 V
FET Feature - Schottky Diode (Body)
Power Dissipation (Max) 3W (Ta), 150W (Tc) 2.5W (Ta), 139W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-6 PG-TDSON-8 FL
Package / Case 8-PowerTDFN 8-PowerTDFN