BSC009NE2LS5ATMA1 vs BSC009NE2LS5IATMA1

Product Attributes

Part Number BSC009NE2LS5ATMA1 BSC009NE2LS5IATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSC009NE2LS5ATMA1 BSC009NE2LS5IATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 100A (Tc) 40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 30A, 10V 0.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 49 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 12 V 3200 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 74W (Tc) 2.5W (Ta), 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN