BSB012N03LX3 G vs BSB017N03LX3 G

Product Attributes

Part Number BSB012N03LX3 G BSB017N03LX3 G
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSB012N03LX3 G BSB017N03LX3 G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 39A (Ta), 180A (Tc) 32A (Ta), 147A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 30A, 10V 1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 169 nC @ 10 V 102 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 16900 pF @ 15 V 7800 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 57W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™ MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON 3-WDSON