BS107G vs BS108G

Product Attributes

Part Number BS107G BS108G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BS107G BS108G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta) 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.6V, 10V 2V, 2.8V
Rds On (Max) @ Id, Vgs 14Ohm @ 200mA, 10V 8Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id 3V @ 1mA 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 150 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226)
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body