BLT80,115 vs BLT81,115

Product Attributes

Part Number BLT80,115 BLT81,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BLT80,115 BLT81,115
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 10V 9.5V
Frequency - Transition 900MHz 900MHz
Noise Figure (dB Typ @ f) - -
Gain - 8dB
Power - Max 2W 2W
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 150mA, 5V 25 @ 300mA, 5V
Current - Collector (Ic) (Max) 250mA 500mA
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SC-73 SC-73