BLT50,115 vs BLT70,115

Product Attributes

Part Number BLT50,115 BLT70,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BLT50,115 BLT70,115
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 10V 8V
Frequency - Transition 470MHz 900MHz
Noise Figure (dB Typ @ f) - -
Gain - -
Power - Max 2W 2.1W
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 300mA, 5V 25 @ 100mA, 4.8V
Current - Collector (Ic) (Max) 500mA 250mA
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SC-73 SC-73