BIDW20N60T vs BIDW30N60T

Product Attributes

Part Number BIDW20N60T BIDW30N60T
Manufacturer Bourns Inc. Bourns Inc.
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
BIDW20N60T BIDW30N60T
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 40 A 60 A
Current - Collector Pulsed (Icm) 60 A 90 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 20A 1.65V @ 15V, 30A
Power - Max 192 W 230 W
Switching Energy 1mJ (on), 300µJ (off) 1.85mJ (on), 450µJ (off)
Input Type Standard Standard
Gate Charge 52 nC 76 nC
Td (on/off) @ 25°C 19ns/48ns 30ns/67ns
Test Condition 400V, 20A, 10Ohm, 15V 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 33.7 ns 40 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 TO-247