BFU710F,115 vs BFU760F,115

Product Attributes

Part Number BFU710F,115 BFU760F,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFU710F,115 BFU760F,115
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 2.8V 2.8V
Frequency - Transition 43GHz 45GHz
Noise Figure (dB Typ @ f) 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Gain - -
Power - Max 136mW 220mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 2V 155 @ 10mA, 2V
Current - Collector (Ic) (Max) 10mA 70mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-343F SOT-343F
Supplier Device Package 4-DFP 4-DFP