| Part Number | BFU730F,115 | BFU710F,115 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 2.8V | 2.8V |
| Frequency - Transition | 55GHz | 43GHz |
| Noise Figure (dB Typ @ f) | 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz | 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz |
| Gain | - | - |
| Power - Max | 197mW | 136mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 205 @ 2mA, 2V | 200 @ 1mA, 2V |
| Current - Collector (Ic) (Max) | 30mA | 10mA |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | SOT-343F | SOT-343F |
| Supplier Device Package | 4-DFP | 4-DFP |