| Part Number | BFU660F,115 | BFU630F,115 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 5.5V | 5.5V |
| Frequency - Transition | 21GHz | 21GHz |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz | 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz |
| Gain | 12dB ~ 21dB | 13dB ~ 22.5dB |
| Power - Max | 225mW | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 10mA, 2V | 90 @ 5mA, 2V |
| Current - Collector (Ic) (Max) | 60mA | 30mA |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | SOT-343F | SOT-343F |
| Supplier Device Package | 4-DFP | 4-DFP |