BFU630F,115 vs BFU610F,115

Product Attributes

Part Number BFU630F,115 BFU610F,115
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFU630F,115 BFU610F,115
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 5.5V 5.5V
Frequency - Transition 21GHz 15GHz
Noise Figure (dB Typ @ f) 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
Gain 13dB ~ 22.5dB 13.5dB ~ 23.5dB
Power - Max 200mW 136mW
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 5mA, 2V 90 @ 1mA, 2V
Current - Collector (Ic) (Max) 30mA 10mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-343F SOT-343F
Supplier Device Package 4-DFP 4-DFP