Part Number | BFU630F,115 | BFU610F,115 |
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Manufacturer | NXP USA Inc. | NXP USA Inc. |
Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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Product Status | Active | Active |
Transistor Type | NPN | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5.5V | 5.5V |
Frequency - Transition | 21GHz | 15GHz |
Noise Figure (dB Typ @ f) | 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz | 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz |
Gain | 13dB ~ 22.5dB | 13.5dB ~ 23.5dB |
Power - Max | 200mW | 136mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 5mA, 2V | 90 @ 1mA, 2V |
Current - Collector (Ic) (Max) | 30mA | 10mA |
Operating Temperature | 150°C (TJ) | 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | SOT-343F | SOT-343F |
Supplier Device Package | 4-DFP | 4-DFP |