BFU590GX vs BFU590QX

Product Attributes

Part Number BFU590GX BFU590QX
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFU590GX BFU590QX
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V
Frequency - Transition 8.5GHz 8GHz
Noise Figure (dB Typ @ f) - -
Gain 8dB 6.5dB
Power - Max 2W 2W
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 80mA, 8V 60 @ 80mA, 8V
Current - Collector (Ic) (Max) 200mA 200mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-243AA
Supplier Device Package SC-73 SOT-89-3