BFU590GX vs BFU580GX

Product Attributes

Part Number BFU590GX BFU580GX
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFU590GX BFU580GX
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V
Frequency - Transition 8.5GHz 11GHz
Noise Figure (dB Typ @ f) - 1.4dB @ 1.8GHz
Gain 8dB 10.5dB
Power - Max 2W 1W
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 80mA, 8V 60 @ 30mA, 8V
Current - Collector (Ic) (Max) 200mA 60mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SC-73 SC-73