BFU580GX vs BFU580QX

Product Attributes

Part Number BFU580GX BFU580QX
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFU580GX BFU580QX
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V
Frequency - Transition 11GHz 10.5GHz
Noise Figure (dB Typ @ f) 1.4dB @ 1.8GHz 1.3dB @ 1.8GHz
Gain 10.5dB 8.5dB
Power - Max 1W 1W
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 30mA, 8V 60 @ 30mA, 8V
Current - Collector (Ic) (Max) 60mA 60mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-243AA
Supplier Device Package SC-73 SOT-89-3