BFU550AVL vs BFU550VL

Product Attributes

Part Number BFU550AVL BFU550VL
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFU550AVL BFU550VL
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V
Frequency - Transition 11GHz 11GHz
Noise Figure (dB Typ @ f) 1.4dB @ 1.8GHz 1.3dB @ 1.8GHz
Gain 12dB 15dB
Power - Max 450mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 8V 60 @ 15mA, 8V
Current - Collector (Ic) (Max) 50mA 50mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-253-4, TO-253AA
Supplier Device Package SOT-23 (TO-236AB) SOT-143B