BFS17PE6327HTSA1 vs BFS17WE6327HTSA1

Product Attributes

Part Number BFS17PE6327HTSA1 BFS17WE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFS17PE6327HTSA1 BFS17WE6327HTSA1
Product Status Not For New Designs Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V
Frequency - Transition 1.4GHz 1.4GHz
Noise Figure (dB Typ @ f) 3.5dB ~ 5dB @ 800MHz 3.5dB ~ 5dB @ 800MHz
Gain - -
Power - Max 280mW 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 1V 40 @ 2mA, 1V
Current - Collector (Ic) (Max) 25mA 25mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package PG-SOT23 PG-SOT323