| Part Number | BFR193WH6327 | BFR193WE6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Active | Active |
| Transistor Type | - | NPN |
| Voltage - Collector Emitter Breakdown (Max) | - | 12V |
| Frequency - Transition | - | 8GHz |
| Noise Figure (dB Typ @ f) | - | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz |
| Gain | - | 10.5dB ~ 16dB |
| Power - Max | - | 580mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | 70 @ 30mA, 8V |
| Current - Collector (Ic) (Max) | - | 80mA |
| Operating Temperature | - | 150°C (TJ) |
| Mounting Type | - | Surface Mount |
| Package / Case | - | SC-70, SOT-323 |
| Supplier Device Package | - | SOT-323 |