BFR193WH6327XTSA1 vs BFR193FH6327XTSA1

Product Attributes

Part Number BFR193WH6327XTSA1 BFR193FH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFR193WH6327XTSA1 BFR193FH6327XTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V
Frequency - Transition 8GHz 8GHz
Noise Figure (dB Typ @ f) 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain 10.5dB ~ 16dB 12.5dB
Power - Max 580mW 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA, 8V 70 @ 30mA, 8V
Current - Collector (Ic) (Max) 80mA 80mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SOT-723
Supplier Device Package PG-SOT323 PG-TSFP-3