BFR182E6327HTSA1 vs BFR181E6327HTSA1

Product Attributes

Part Number BFR182E6327HTSA1 BFR181E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFR182E6327HTSA1 BFR181E6327HTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V
Frequency - Transition 8GHz 8GHz
Noise Figure (dB Typ @ f) 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain 12dB ~ 18dB 18.5dB
Power - Max 250mW 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 8V 70 @ 5mA, 8V
Current - Collector (Ic) (Max) 35mA 20mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23