| Part Number | BFR181E6327 | BFR181WE6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V | 12V |
| Frequency - Transition | 8GHz | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz |
| Gain | 18.5dB | 19dB |
| Power - Max | 175mW | 175mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 8V | 70 @ 5mA, 8V |
| Current - Collector (Ic) (Max) | 20mA | 20mA |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | SC-70, SOT-323 |
| Supplier Device Package | PG-SOT23 | SOT-323 |