BFP843H6327XTSA1 vs BFP843FH6327XTSA1

Product Attributes

Part Number BFP843H6327XTSA1 BFP843FH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP843H6327XTSA1 BFP843FH6327XTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 2.25V 2.25V
Frequency - Transition - -
Noise Figure (dB Typ @ f) 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz
Gain 13.5dB ~ 24.5dB 13.5dB ~ 25dB
Power - Max 125mW 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 15mA, 1.8V 150 @ 15mA, 1.8V
Current - Collector (Ic) (Max) 55mA 55mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 4-SMD, Flat Leads
Supplier Device Package PG-SOT343-4-3 PG-TSFP-4-1