BFP840FESDH6327XTSA1 vs BFP840ESDH6327XTSA1

Product Attributes

Part Number BFP840FESDH6327XTSA1 BFP840ESDH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP840FESDH6327XTSA1 BFP840ESDH6327XTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 2.6V 2.25V
Frequency - Transition 85GHz 80GHz
Noise Figure (dB Typ @ f) 0.75dB @ 5.5GHz 0.85dB @ 5.5GHz
Gain 35dB 18.5dB
Power - Max 75mW 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA, 1.8V 150 @ 10mA, 1.8V
Current - Collector (Ic) (Max) 35mA 35mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 4-SMD, Flat Leads SC-82A, SOT-343
Supplier Device Package PG-TSFP-4-1 PG-SOT343-4-2