BFP840ESDH6327XTSA1 vs BFP740ESDH6327XTSA1

Product Attributes

Part Number BFP840ESDH6327XTSA1 BFP740ESDH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP840ESDH6327XTSA1 BFP740ESDH6327XTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 2.25V 4.7V
Frequency - Transition 80GHz 45GHz
Noise Figure (dB Typ @ f) 0.85dB @ 5.5GHz 0.55dB ~ 1.8dB @ 150MHz ~ 10GHz
Gain 18.5dB 8.5dB ~30.5dB
Power - Max 75mW 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA, 1.8V 160 @ 25mA, 3V
Current - Collector (Ic) (Max) 35mA 45mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package PG-SOT343-4-2 PG-SOT343-4-2