BFP740H6327XTSA1 vs BFP780H6327XTSA1

Product Attributes

Part Number BFP740H6327XTSA1 BFP780H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP740H6327XTSA1 BFP780H6327XTSA1
Product Status Active Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 4.7V 6.1V
Frequency - Transition 42GHz 900MHz
Noise Figure (dB Typ @ f) 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
Gain 27dB 27dB
Power - Max 160mW 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 25mA, 3V 85 @ 90mA, 5V
Current - Collector (Ic) (Max) 30mA 120mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package PG-SOT343-4-2 PG-SOT343-4-1