BFP840FESDH6327XTSA1 vs BFP740FESDH6327XTSA1

Product Attributes

Part Number BFP840FESDH6327XTSA1 BFP740FESDH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP840FESDH6327XTSA1 BFP740FESDH6327XTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 2.6V 4.7V
Frequency - Transition 85GHz 47GHz
Noise Figure (dB Typ @ f) 0.75dB @ 5.5GHz 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Gain 35dB 9dB ~ 31dB
Power - Max 75mW 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA, 1.8V 160 @ 25mA, 3V
Current - Collector (Ic) (Max) 35mA 45mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 4-SMD, Flat Leads 4-SMD, Flat Leads
Supplier Device Package PG-TSFP-4-1 4-TSFP