BFP740FESDH6327XTSA1 vs BFP740ESDH6327XTSA1

Product Attributes

Part Number BFP740FESDH6327XTSA1 BFP740ESDH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP740FESDH6327XTSA1 BFP740ESDH6327XTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 4.7V 4.7V
Frequency - Transition 47GHz 45GHz
Noise Figure (dB Typ @ f) 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 0.55dB ~ 1.8dB @ 150MHz ~ 10GHz
Gain 9dB ~ 31dB 8.5dB ~30.5dB
Power - Max 160mW 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 25mA, 3V 160 @ 25mA, 3V
Current - Collector (Ic) (Max) 45mA 45mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 4-SMD, Flat Leads SC-82A, SOT-343
Supplier Device Package 4-TSFP PG-SOT343-4-2