BFP720ESDH6327 vs BFP7220ESDH6327

Product Attributes

Part Number BFP720ESDH6327 BFP7220ESDH6327
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP720ESDH6327 BFP7220ESDH6327
Product Status Active Active
Transistor Type NPN -
Voltage - Collector Emitter Breakdown (Max) 4.7V -
Frequency - Transition 43GHz -
Noise Figure (dB Typ @ f) 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz -
Gain 11dB ~ 30.5dB -
Power - Max 100mW -
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 15mA, 3V -
Current - Collector (Ic) (Max) 30mA -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case SC-82A, SOT-343 -
Supplier Device Package PG-SOT343-4-2 -