BFP650H6327XTSA1 vs BFP450H6327XTSA1

Product Attributes

Part Number BFP650H6327XTSA1 BFP450H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP650H6327XTSA1 BFP450H6327XTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 4.5V 5V
Frequency - Transition 37GHz 24GHz
Noise Figure (dB Typ @ f) 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz 1.25dB @ 1.8GHz
Gain 10.5dB ~ 21.5dB 15.5dB
Power - Max 500mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 80mA, 3V 60 @ 50mA, 4V
Current - Collector (Ic) (Max) 150mA 100mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package PG-SOT343-3D PG-SOT343-3D