BFP640H6327XTSA1 vs BFP650H6327XTSA1

Product Attributes

Part Number BFP640H6327XTSA1 BFP650H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP640H6327XTSA1 BFP650H6327XTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 4.5V 4.5V
Frequency - Transition 40GHz 37GHz
Noise Figure (dB Typ @ f) 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain 12.5dB 10.5dB ~ 21.5dB
Power - Max 200mW 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 30mA, 3V 110 @ 80mA, 3V
Current - Collector (Ic) (Max) 50mA 150mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package PG-SOT343-3D PG-SOT343-3D