BFP640H6327XTSA1 vs BFP540H6327XTSA1

Product Attributes

Part Number BFP640H6327XTSA1 BFP540H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP640H6327XTSA1 BFP540H6327XTSA1
Product Status Active Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 4.5V 5V
Frequency - Transition 40GHz 30GHz
Noise Figure (dB Typ @ f) 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz 0.9dB ~ 1.4dB @ 1.8GHz
Gain 12.5dB 16dB
Power - Max 200mW 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 30mA, 3V 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max) 50mA 80mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package PG-SOT343-3D PG-SOT343-3D