| Part Number | BFP840FESDH6327XTSA1 | BFP640FESDH6327XTSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 2.6V | 4.7V |
| Frequency - Transition | 85GHz | 46GHz |
| Noise Figure (dB Typ @ f) | 0.75dB @ 5.5GHz | 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz |
| Gain | 35dB | 8B ~ 30.5dB |
| Power - Max | 75mW | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 10mA, 1.8V | 110 @ 30mA, 3V |
| Current - Collector (Ic) (Max) | 35mA | 50mA |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 4-SMD, Flat Leads | 4-SMD, Flat Leads |
| Supplier Device Package | PG-TSFP-4-1 | 4-TSFP |