BFP640ESDH6327XTSA1 vs BFP640FESDH6327XTSA1

Product Attributes

Part Number BFP640ESDH6327XTSA1 BFP640FESDH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
BFP640ESDH6327XTSA1 BFP640FESDH6327XTSA1
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 4.7V 4.7V
Frequency - Transition 46GHz 46GHz
Noise Figure (dB Typ @ f) 0.6dB ~ 2dB @ 150MHz ~ 10GHz 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Gain 7dB ~ 30dB 8B ~ 30.5dB
Power - Max 200mW 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 30mA, 3V 110 @ 30mA, 3V
Current - Collector (Ic) (Max) 50mA 50mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 4-SMD, Flat Leads
Supplier Device Package PG-SOT343-4-2 4-TSFP